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BIOGRAPHICAL SUMMARY

Education

AHF Halle/S. 1988
High School Graduation

TU Ilmenau 1995
Dipl.-Ing. (Diploma) Electrical Engineering

TU Ilmenau 2003
Dr.-Ing. (Ph.D.) in Electrical Engineering

Experience

1992 - 1993 Practical Training at X-FAB GmbH Erfurt
"Simulation of Technological Processes and Semiconductor Devices"

1995 Diploma Thesis
"Optimization of High-Voltage Devices by Means of Device Simulation"

1995 - 2004
Scientific Assistant at the TU Ilmenau

2003 Doctoral Thesis
"Simulation von Leistungsbauelementen mit durch Bestrahlungsverfahren eingestellter Trägerlebensdauer"

since 2004
Research & Development Engineer at Infineon Technologies Austria AG, Villach
Principal Power Device Development

Fields of Research Interest

Semiconductor device physics, simulation and characterization of devices, lifetime engineering, carrier recombination, power devices

Projects

Implementation and Experimental Verification of Recombination Models

Analysis of Oscillation Phenomena in Modules with Paralleled IGBT Chips

Power MOSFET Development

Professional Activities

Reviewing work for:
  • Microelectronics Reliability
  • IET Circuits, Devices and Systems
  • IEEE Transactions on Power Electronics
  • EPE Journal
  • European Conference on Power Electronics EPE 2001 in Graz, Austria
  • European Conference on Power Electronics EPE 2003 in Toulouse, France
  • 24th International Conference on Microelectronics MIEL 2004 in Niš, Serbia and Montenegro
  • 11th International Power Electronics and Motion Control Conference EPE-PEMC 2004 in Riga, Latvia
  • European Conference on Power Electronics EPE 2005 in Dresden, Germany
  • 25th International Conference on Microelectronics MIEL 2006 in Niš, Serbia and Montenegro
  • 4th Power Conversion Conference PCC 2007 in Nagoya, Japan
  • European Conference on Power Electronics EPE 2007 in Aalborg, Denmark
  • 26th International Conference on Microelectronics MIEL 2008 in Niš, Serbia
  • 39th Power Electronics Specialists Conference PESC 2008 auf Rhodes, Greece
  • 13th International Power Electronics and Motion Control Conference EPE-PEMC 2008 in Poznan, Poland
  • IEEE Energy Conversion Congress and Exhibition ECCE 2009 in San Jose, USA
  • European Conference on Power Electronics EPE 2009 in Barcelona, Spain
  • 27th International Conference on Microelectronics MIEL 2010 in Niš, Serbia
  • IEEE Energy Conversion Congress and Exhibition ECCE 2010 in Atlanta, USA
  • 14th International Power Electronics and Motion Control Conference EPE-PEMC 2010 in Ohrid, Macedonia
  • European Conference on Power Electronics EPE 2011 in Birmingham, UK
  • 28th International Conference on Microelectronics MIEL 2012 in Niš, Serbia
  • 15th International Power Electronics and Motion Control Conference EPE-PEMC 2012 ECCE Europe in Novi Sad, Serbia
  • IEEE Energy Conversion Congress and Exhibition ECCE 2013 in Denver, USA
  • European Conference on Power Electronics EPE 2013 in Lille, France
  • European Conference on Power Electronics EPE 2014 in Lappeenranta, Finland
  • European Conference on Power Electronics EPE 2015 in Geneva, Switzerland
  • European Conference on Power Electronics EPE 2016 in Karlsruhe, Germany
  • European Conference on Power Electronics EPE 2017 in Warsaw, Poland

Session Chair at the European Conference on Power Electronics
  • EPE 2003 in Toulouse, Frankreich
  • EPE 2005 in Dresden, Deutschland
  • EPE 2007 in Aalborg, Dänemark
  • EPE 2009 in Barcelona, Spanien
  • EPE 2011 in Birmingham, UK
  • EPE 2013 in Lille, France
  • EPE 2015 in Geneva, Switzerland

Member of the International Scientific Committee of the EPE Association


PUBLICATIONS



D.Peters, R.Siemieniec, T.Aichinger, T.Basler, R.Esteve, W.Bergner and D.Kück, "Performance and Ruggendess of 1200V SiC-Trench-MOSFET", Proc. ISPSD 2017, Sapporo, Japan

D.Peters, T.Basler, B.Zippelius, T.Aichinger, W.Bergner, R.Esteve, D.Kück and R.Siemieniec, "The new CoolSiC™ Trench MOSFET Technology for Low Gate Oxide Stress and High Performance", Proc. PCIM Europe 2017, Nuremberg, Germany

R.K.Williams, M.N.Darwish, R.A.Blanchard, R.Siemieniec, P.Rutter and Y.Kawaguchi, "The Trench Power MOSFET: Part I History, Technology, and Prospects", IEEE Transactions on Electron Devices, pp. 674-691, Vol. 64, No. 3, 2017 (Invited Paper)

R.K.Williams, M.N.Darwish, R.A.Blanchard, R.Siemieniec, P.Rutter and Y.Kawaguchi, "The Trench Power MOSFET - Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability", IEEE Transactions on Electron Devices, pp. 692-712, Vol. 64, No. 3, 2017 (Invited Paper)

R.Siemieniec, C.Braz and O.Blank, "Design considerations for charge-compensated power MOSFET in the medium-voltage range", Proc. ISPS 2016, Prague, Czech Republic

R.Walter, R.Siemieniec and M.Hoja, "An improved and low-resistive package for high-current MOSFET", Proc. EPE 2015, Geneva, Switzerland

R.Siemieniec, M.Hutzler, D.Laforet, O.Blank, L.-J.Yip, A.Huang and R.Walter, "Development of low-voltage power MOSFET based on application requirement analysis", Facta Universitatis (Niš), Ser.: Elec. Energ., Vol.28, No.3, 2015

R.Siemieniec, M.Hutzler, D.Laforet, L.-J.Yip, A.Huang and R. Walter, "Application-tailored development of Power MOSFET", Proc. ISPS 2014, Prague, Czech Republic

R.Siemieniec, O.Blank, M.Hutzler, L.J.Yip and J.Sanchez, "Robustness of MOSFET Devices under Hard Commutation of the Body Diode", Proc. EPE 2013, Lille, France

R.Siemieniec and O.Blank, "Power MOSFET Design for Synchronous Rectification", Proc. ISPS 2012, Prague, Czech Republic

R.Siemieniec., G.Nöbauer and D.Domes, "Stability and performance analysis of a SiC-based cascode switch and an alternative solution", Microelectronics Reliability, pp. 509-518, Vol. 52, No. 3, 2012
Veröffentlicht bei Elsevier

R.Siemieniec, C.Mößlacher, O.Blank, M.Rösch, M.Frank and M.Hutzler, "A new Power MOSFET Generation designed for Synchronous Rectification", Proc. EPE 2011, Birmingham, United Kingdom

R.Siemieniec and U.Kirchner , "The 1200V Direct-Driven SiC JFET power switch", Proc. EPE 2011, Birmingham, United Kingdom

R.Siemieniec., G.Nöbauer and D.Domes, "Stability and performance analysis of a cascode switch", Proc. ISPS 2010, Prague, Czech Republic

R.Baburske, J.Lutz, H.-J.Schulze, T.Basler, R.Siemieniec, M.Pfaffenlehner, H.P.Felsl, F.-J.Niedernostheide and F.Pfirsch, "The Trade-Off between Surge-Current Capability and Reverse-Recovery Behaviour of High-Voltage Power Diodes", Proc. ISPS 2010, Prague, Czech Republic

R.Baburske, J.Lutz, H.-J.Schulze, H.P.Felsl and R.Siemieniec, "A new Diode Structure with Inverse Injection Dependency of Emitter Efficiency (IDEE)" Proc. ISPSD 2010, Hiroshima, Japan

R.Siemieniec, O.Häberlen and J.M.M.Sanchez, "Extending the OptiMOS 3 Power MOSFET Family", Bodos Power, pp. 22-24, No. 10, 2009

R.Siemieniec, O.Häberlen and J.M.M.Sanchez, "Leistungs-MOSFETs im Niederspannungsbereich - Wege zu mehr Effizienz", Design & Elektronik, pp. 11-12, No. 9, 2009

R.Siemieniec, F.Hirler and C.Geissler, "Space-saving edge-termination structures for vertical charge compensation devices", Proc. EPE 2009, Barcelona, Spain

R.Siemieniec, A.Pugatschov, C.Geissler, H.-J.Schulze, F.-J.Niedernostheide, R.Heiderhoff and L.-J.Balk, "Analysis of power devices breakdown behaviour by ion beam and electron beam induced charge microscopy", Proc. ISPS 2008, Prag, Czech Republic

I.Pawel, R.Siemieniec and M.Born, "Theoretical Evaluation of Maximum Doping Concentration, Breakdown Voltage and On-state Resistance ofField-Plate Compensated Devices", Proc. ISPS 2008, Prag, Czech Republic

I.Pawel, R.Siemieniec and M.Rösch, "Multi-Cell Effects during Unclamped Inductive Switching of Power MOSFETs", Proc. MIEL, Niš/Serbia, 2008

I.Pawel, R.Siemieniec, "A New Simulation Approach to Investigate Avalanche Behavior", Proc. IETA, 2007

I.Pawel, R.Siemieniec, M.Rösch, F.Hirler and R.Herzer, "Experimental Study and Simulations on Two Different Avalanche Modes in Trench Power MOSFETs", IET Proceedings - Circuits, Devices & Systems, pp. 341-346, Vol. 1, No. 5, 2007

I.Pawel, R.Siemieniec, M.Rösch, F.Hirler, C.Geissler, A.Pugatschow and L.J.Balk, "Design of Avalanche Capability of Power MOSFETs by Device Simulation", Proc. EPE 2007, Aalborg, Denmark

I.Pawel, R.Siemieniec, M.Rösch, F.Hirler, R.Herzer, "Simulating the Avalanche Behavior of Trench Power MOSFETs", Proc. ISPS 2006, Prag, Czech Republic, 2006

L.Görgens, R.Siemieniec, J.M.M.Sanchez, "MOSFET Technology as a Key for High Power Density Converters", Proc. EPE-PEMC 2006, Portoroz, Slovenia, 2006

R.Siemieniec, F.Hirler, A.Schlögl, M.Rösch, N.Soufi-Amlashi, J.Ropohl, U.Hiller, "A new fast and rugged 100 V power MOSFET", Proc. EPE-PEMC 2006, Portoroz, Slovenia, 2006

L.Görgens, R.Siemieniec, "Niedriger Widerstand und kurze Schaltzeiten - OptiMOS-2 - 100V-MOSFETs für Leistungsanwendungen mit hohem Wirkungsgrad", Elektronik, pp. 60-63, No. 13, June, 2006

L.Görgens, R.Siemieniec, "Series of Leading Edge 100V MOSFETs", pp. 37-40, Power Systems Design Europe, June, 2006

L.Görgens, R.Siemieniec, "100V MOSFETs for embedded power systems", pp. 8-10, EDN Asia Supplement, No. 5, 2006

R.Siemieniec, H.-J.Schulze, F.-J.Niedernostheide, W.Südkamp, J.Lutz, "Compensation and doping effects in heavily helium-radiated silicon for power device applications", Microelectronics Journal, pp. 204-212, Vol. 37, No. 3, 2006
Published with Elsevier

R.Siemieniec, P.Mourick, M.Netzel, J.Lutz, "The Plasma Extraction Transit-Time Oscillation in Bipolar Power Devices - Mechanism, EMC Effects and Prevention", IEEE Transactions on Electron Devices, pp. 369-379, Vol. 53, No. 2, 2006
This article is posted with permission of IEEE. Single copies of the article can be downloaded for personal use only!

R.Siemieniec, F.-J.Niedernostheide, H.-J.Schulze, W.Südkamp, U.Kellner-Werdehausen, J.Lutz, "Irradiation-induced deep levels in silicon for power device tailoring", Journal of the Electrochemical Society, pp. G108-G118, Vol. 152, No. 2, 2006
Reproduced by permission of ECS - The Electrochemical Society. Single copies of the article can be downloaded for personal use only!

R.Siemieniec, P.Mourick, M.Netzel, "Avoidance of RF plasma extraction transit-time oscillations using 3-D EMC simulation: chances and limits", IEE Proceedings - Circuits, Devices & Systems, pp. 16-22, Vol. 153, No. 1, 2006

J.Lutz, R.Siemieniec, H.-J.Schulze, F.-J.Niedernostheide, "Characteristics of irradiation-induced deep levels in silicon", Proc. Solid State Chemistry and Modern Micro- and Nanotechnologies Conference 2005, Kislovodsk, Russia (Invited Paper)

A.Schlögl, F.Hirler, J.Ropohl, U.Hiller, M.Rösch, N.Soufi-Amlashi, R.Siemieniec, "A new robust power MOSFET family in the voltage range 80V - 150V with superior low RDSon, excellent switching properties and improved body diode", Proc. EPE 2005, Dresden, Germany

R.Siemieniec, F.-J.Niedernostheide, H.-J.Schulze, W.Südkamp, U.Kellner-Werdehausen, J.Lutz, "Irradiation-Induced Deep Levels In Silicon", Proc. 206th Annual Meeting of ECS 2004, Hawaii, USA (Invited Paper)

R.Siemieniec, M.Netzel, P.Mourick, "Characterisation of Power Modules by 3D EMC Simulation for the Avoidance of RF Transit-Time Oscillations", Proc. ISPS 2004, Prag, Czech Republic

R.Siemieniec, H.-J.Schulze, F.-J.Niedernostheide, W.Südkamp, J.Lutz, "Doping Effects in Heavily Helium-Radiated Silicon", Proc. ISPS 2004, Prag, Czech Republic

R.Siemieniec, J.Lutz, R.Herzer, "Analysis of dynamic impatt oscillations caused by radiation induced deep centres with local and homogenous vertical distribution", IEE Proceedings - Circuits, Devices & Systems, pp. 219-224, Vol.151, No. 3, 2004
This article is posted with permission of IEE. Single copies of the article can be downloaded for personal use only!

R.Siemieniec, P.Mourick, J.Lutz, M.Netzel, "Analysis of Plasma Extraction Transit Time Oscillations in Bipolar Power Devices", Proc. ISPSD 2004, Kitakyushu, Japan

R.Siemieniec, P.Mourick, J.Lutz, "EMC Problems due to Transit-Time Oscillations in Bipolar Power Devices", Proc. PCIM Europe 2004, Nuremberg, Germany

R.Siemieniec, R.Herzer, M.Netzel, J.Lutz, "Application of Carrier Lifetime Control by Irradiation to 1.2kV NPT IGBTs", Proc. Miel 2004, pp. 167-170, Niš/Serbia & Montenegro, 2004

R.Siemieniec, J.Lutz, "Possibilities and limits of axial lifetime control by radiation induced centres in fast recovery diodes", Microelectronics Journal, Vol.35, No.3, pp.259-267, 2004
This article is posted with permission of Elsevier. Single copies of the article can be downloaded for personal use only!

R.Siemieniec, "Simulation von Leistungsbauelementen mit durch Bestrahlungsverfahren eingestellter Trägerlebensdauer", PhD Thesis, BoD GmbH Norderstedt, 2003

R.Siemieniec, R.Herzer, M.Netzel, T.Doll, J.Lutz, "A Study on the Influence of Different Carrier Lifetime Profiles on the Properties of 1.2kV NPT IGBTs", Proc. 48th International Scientific Colloquium, Ilmenau, 2003

R.Siemieniec, M.Netzel, J. Lutz, P.Mourick, "Transit Time Oscillations as a Source of EMC Problems in Bipolar Power Devices", Proc. EPE 2003, Toulouse, 2003

R.Siemieniec, J.Lutz, R.Herzer, "Analysis of Dynamic Impatt Oscillations caused by Radiation Induced Deep Centers", Proc. ISPSD 2003, Cambridge, 2003

R.Siemieniec, J.Lutz, "Axial Lifetime Control by Radiation Induced Centres in Fast Recovery Diodes", Proc. ISPS 2002, Prague, 2002

R.Siemieniec, W.Südkamp, J.Lutz, "Determination of Parameters of Radiation Induced Traps in Silicon", Solid-State Electronics, Vol.46, No.6, pp.891-901, 2002
This article is posted with permission of Elsevier. Single copies of the article can be downloaded for personal use only!

M.Netzel, R.Siemieniec, R.Lerner, J.Lutz, "3.3kV IGBT and Diode Chipset using Lifetime Control Techniques and Low-Efficiency Emitters", Facta Universitatis (Niš), Ser.: Elec. Energ., Vol.15, No.1, pp.51-59, April 2002

R.Siemieniec, J.Lutz, W.Südkamp, R.Herzer, "Parameters of Radiation-Induced Centers for Simulation of Irradiated Power Devices", Proc. MIEL 2002, Niš/Yugoslavia, 2002

M.Netzel, R.Lerner, R.Siemieniec, J.Lutz, "PT-IGBT and Freewheeling Diode for 3.3kV using Lifetime Control Techniques and Low-Efficiency Emitters", Proc. MIEL 2002, Niš/Yugoslavia, 2002

R.Siemieniec, W.Südkamp, J.Lutz, "Applying Device Simulation for Lifetime-Controlled Devices", Proc. ICCDCS 2002 (International Caracas Conference on Devices, Circuits and Systems), Aruba, 2002

R.Siemieniec, W.Südkamp, J.Lutz, M.Netzel, "Temperature Dependent Properties of Different Lifetime Killing Technologies on Example of Fast Power Diodes", Proc. IETA 2001 (International Conference on Industrial Electronics, Technology and Automation), Cairo, Egypt

R.Siemieniec, D.Schipanski, W.Südkamp, J.Lutz, "Simulation and Experimental Results of Irradiated Power Diodes", Proc. EPE 1999, Lausanne, 1999

R.Siemieniec, M.Netzel, R.Herzer, "Comparison of the NPT and PT Cell Concept for 600V IGBTs" , Proc. EPE 1997, pp.4024-4028, Trondheim, 1997

R.Siemieniec, M.Netzel, D.Schipanski, R.Herzer: "Comparison of Different Cell Concepts for 1200V-NPT-IGBT's", Proc. MIEL 1995, pp.375-380, Niš/Yugoslavia, 1995

R.Siemieniec, "Optimierung von Hochvoltbauelementen mittels 2D-Simulation", Diploma Thesis, TU Ilmenau, 1995

R.Siemieniec: "Einfacher MW-Super mit A 283 D für den Anfänger", Funkamateur 04/88, pp.175-176, 1988
- A very historical article not related with power electronics or device physics... -



LECTURES etc.



D.Peters, T.Aichinger, T.Basler, W.Bergner, R.Esteve, D.Kück, R.Siemieniec, D.Zippelius, "1200V SiC Trench-MOSFET optimised for high reliability and high performance", 45.Kolloquium Halbleiter - Leistungsbauelemente und ihre systemtechnische Anwendung, Freiburg, 2016

F.Hirler, A.Schlögl, M.Rösch, N.Soufi-Amlashi, R.Siemieniec, J.Ropohl, U.Hiller, L.Görgens, "Schneller und robuster 100V Leistungstransistor jenseits des Siliziumlimits", 34.Kolloquium Halbleiter - Leistungsbauelemente und ihre systemtechnische Integration, Freiburg, 2005

R.Siemieniec, P.Mourick, J.Lutz, M.Netzel, "Pett-Schwingungen in Leistungsmodulen mit parallel geschalteten Bauelementen", 32.Kolloquium Halbleiter - Leistungsbauelemente und ihre systemtechnische Integration, Freiburg, 2003

R.Siemieniec, "Durch Leistungsbauelemente hervorgerufene EMV-Störungen", Institutskolloquium des Elektrotechnischen Institutes an der TU Chemnitz, Chemnitz, 2003

R.Siemieniec, J.Lutz, "Analyse der durch tiefe bestrahlungsinduzierte Zentren hervorgerufenen dynamischen Impatt-Oszillation", 31.Kolloquium Halbleiter - Leistungsbauelemente und ihre systemtechnische Integration, Freiburg, 2002

M.Netzel, R.Lerner, R.Siemieniec, J.Lehmann, J.Lutz, "PT-IGBT/CAL-Diode Kombination für 3.3kV", 31.Kolloquium Halbleiter - Leistungsbauelemente und ihre systemtechnische Integration, Freiburg, 2002

R.Siemieniec, J.Lutz, W.Südkamp, "Simulation von Bauelementen mit strahlungsinduzierten Rekombinationszentren", 30.Kolloquium Halbleiter - Leistungsbauelemente und ihre systemtechnische Integration, Freiburg, 2001

R.Siemieniec, "Ergebnisse und Probleme bei der Simulation lebensdauereingestellter Leistungsbauelemente", Seminar Semikron Elektronik GmbH Nürnberg, Juni 2000

W.Südkamp, R.Siemieniec, J.Lutz, "Untersuchung der Temperaturabhängigkeit der Trägerlebensdauer in elektronenbestrahlten Dioden mit der DLTS- und Speicherzeitmessung", 28.Kolloquium Halbleiter-Leistungsbauelemente und Materialgüte Silizium, Freiburg, 1999

M.Netzel, R.Siemieniec, "Lebensdauereinstellung an Bauelementen der Leistungselektronik", Institutskolloquium des Institutes für Elektrophysik, TU München, Mai 1999

M.Netzel, R.Herzer, R.Siemieniec, D.Schipanski, "Möglichkeiten der Realisierung und Vorteile eines bidirektional sperrfähigen IGBTs", 25.Kolloquium Halbleiter-Leistungsbauelemente und Materialgüte von Silizium Freiburg /Breisgau, 1996